STMICROELECTRONICS BUL1102EFP Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE FSR IT-SACWP-12 reverse transfer Memory 64 MB

reverse transfer Memory 64 MB RAM Encoding Dual High/Low-Coercivity 3-Track Magnetic Stripe Encoder Media Handling Capacity Input: 250 cards

Padded leatherette cradle Dimensions (D x W x H) 2

Product Range WE-PD Series Inductance 47µH RMS Current (Irms) 850mA Saturation Current (Isat) 1A Inductor Construction Shielded DC Resistance Max 0

Brand STMICROELECTRONICS Part Number STP9NM60N Quantity Each Technical Data Sheet EN Product Change Notice EN

3-Digit combo lock Includes drawer brackets for easy installation Constructed of 5052 aluminum Black powder coated texture Made in the USA

STMICROELECTRONICS BUL1102EFP Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE FSR IT-SACWP-12 reverse transfer Memory 64 MBThis is a Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE product from STMICROELECTRONICS with the model number BUL1102EFPProduct details Transistor Polarity NPN Collector Emitter Voltage V(br)ceo 450V Transition Frequency ft Power Dissipation Pd 30W DC Collector Current 4A DC Current Gain hFE 20hFE Transistor Case Style TO 220FP No. of Pins 3Pins Operating Temperature Max 150C Product Range Automotive Qualification Standard MSL Other