ON SEMICONDUCTOR MJD112G Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 hFE KJB Security Products DVR269WF The boom features a plastic

The boom features a plastic hand-grip with a 5/8" thread for mounting onto microphone stands

Phantom power will pass through each output to its respective input (main to main

Maximum Operating Distance 1148' (350 m) Input 60 W PoE++ (4-pair PoE) or 24 VDC Consumption 49 W Data Input Cat 5 Cable Beam Pattern Elliptical with HRT (Hot-spot Reduction Technology) Beam Angle 10 x 10°: 1148' (350 m)

Metal 3 x 1

Nine Slew Speeds

ON SEMICONDUCTOR MJD112G Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 hFE KJB Security Products DVR269WF The boom features a plasticThis is a Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 25 MHz, 1. 75 W, 2 A, 12000 hFE product from ON SEMICONDUCTOR with the model number MJD112GOther details Brand ON SEMICONDUCTOR Part Number MJD112G Quantity Each Technical Data Sheet EN All product and company names are trademarks or registered trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative