IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V Olympus LH-40B Manual AF Point Selection

Manual AF Point Selection

The hot swappable cards can be inserted or removed even when the power is on

Holding Current 900mA Automotive Qualification Standard - Operating Temperature Min -40°C Product Range PolySwitch RXEF Series Tripping Current 1

Through Hole product from HARTING with the model number 09662526617Product details

enabling you to select the appropriate diopter for your vision and your camera model

IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V Olympus LH-40B Manual AF Point SelectionThe IXFN200N10P is a N channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. Fast intrinsic rectifier Rugged polysilicon gate cell structure Encapsulating epoxy meets UL94V 0, flammability classification Rugged polysilicon gate cell structure Easy to mount High power density Space savings Applications